Understanding the facet formation mechanisms of Si thin-film solidification through three-dimensional phase-field modeling

作者：Chen G Y; Lan C W^*

来源：Journal of Crystal Growth, 2017, 474: 166-170.

DOI：10.1016/j.jcrysgro.2016.12.009

• Solidification
• Morphology
• Simulation
• Facet

Adaptive phase field modeling is used in order to model the formation mechanism of a silicon faceted interface in three dimensions. We investigate the faceting condition for equilibrium shapes and dynamic situations. In this study, we propose a new anisotropic function of surface energy for the phase-field simulations in three-dimension, and negative stiffness is further considered. The morphological evolutions are presented and compare well with experimental findings. The growth mechanism is further discussed.

• 出版日期2017-9-15