科研之友
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摘要
A monolithic Ka- band power amplifier ( PA) using 8- way power combining technique is designed and fabricated in 150 nm GaAs pseudomorphic high electron mobility transistor ( pHEMT) process. The PA is composed of three amplifying stages and novelly designed output microwave networks for device matching and power combining, which occupies an area of 4.7 mmx3.9 mm. The proposed microwave networks consists of device matching networks, multi- stage Wilkinson networks, Wilkinson- to- Lange- coupler matching networks and Lange coupler. The amplifying devices and Wilkinson networks are proposed to design an internal impedance of 30.5 Ohms instead of widely used 50 Ohms to achieve a wide size of microstrip- line for handling large RF and DC current since they are used as DC power feed as well. The additional matching network is employed to match the 30.5- Ohm impedance with the 50- Ohm Lange coupler. The measured results show the PA using the novel microwave networks provides the power gain of 21 dB, the saturated output power ( P-sat) of 33.6 dBm and the peak power added- efficiency (PAE) of 25.6% at 33 GHz.
