A Dual-Mode Multi-Band Second Harmonic Controlled SOI LDMOS Power Amplifier

作者：Kim Kichul^*; Lee Dong Ho; Hong Songcheol

来源：IEEE Microwave and Wireless Components Letters, 2015, 25(7): 466-468.

DOI：10.1109/LMWC.2015.2429115

• Adaptive bias circuit
• dual-mode
• LTE
• multi-band
• second harmonic controlled
• SOI LDMOS PA

This letter presents a dual-mode multi-band second harmonic controlled SOI LDMOS power amplifier (PA). A mode selection switch is designed to have better power handing capability than a conventional switch, which improves performance in low power mode (LPM). To improve the PA's linearity in high power mode (HPM), second harmonic is controlled with the aid of a path for LPM. The PA, implemented with a 0.13-m SOI LDMOS process, operates in triple bands (band 5, 8, and 20) with dual power modes. It is measured using a 16 QAM long-term evolution (LTE) signal with a 10 MHz bandwidth. At 850 MHz, the results show 27.7 dBm average output power (Pout), 31.4 dB gain, and 31.4% power-added efficiency (PAE) with 4% error-vector magnitude (EVM) in HPM and 10.4 dB gain, 15.5 dBm Pout, and 22.5% PAE with 4% EVM in LPM with the LTE signal.

• 出版日期2015-7