Misfit dislocations in In-rich InGaN/GaN quantum well structures

作者：Costa PMFJ^*; Datta R; Kappers MJ; Vickers ME; Humphreys CJ; Graham DM; Dawson P; Godfrey MJ; Thrush EJ; Mullins JT

来源：Physica Status Solidi A-Applications and Materials Science, 2006, 203(7): 1729-1732.

DOI：10.1002/pssa.200565219

Strain relaxation has been studied for the 10-period quantum well (QW) heterostructures grown by MOVPE, In0.16Ga0.84N/GaN and In0.2Ga0.8N/GaN, both emitting with high efficiency in the blue and green regions, respectively. Additionally, a set of high-In content InGaN/GaN QW structures, where growth parameters were kept constant but QW numbers varied between I and 10, were also analysed by TEM, XRD and PL. For the highly-efficient green and the set of variable QW samples, TEM structural studies identified large well-width fluctuations and misfit dislocations that thread into the sample surface and are generated in the quantum. well stack. This contrasts with similar observations of blue-emitting MQWs where misfit dislocations arc! not seen. PL measurements have been carried out for the In-rich QW series and did not reveal a greater degradation of the optical properties with increasing numbers of quantum wells in the stack.

• 出版日期2006-5