科研之友
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摘要
In this article, a wideband microwave amplifier design adopting negative image synthesis is presented. Various RF and microwave characteristics of the amplifier have been analyzed and simulated. The design approach incorporated nonlinear model of the transistor with Negative Image Synthesis for impedance matching networks at the input and output section of the amplifier. The added strength to the design is the implementation doing away with discrete passive components like chip resistor, capacitor and inductor. The biasing network, matching circuits both input and output sections (IMN, OMN) are all implemented with an optimum number of micro strip transmission lines. The designed amplifier renders an excellent transducer gain (G(T)) of a maximum of 20 dB and a minimum of 10 dB over the designated frequency band of 1-5 GHz with a noise figure (NF) having value lesser than 1 dB. The other parameters such as 1 dB compression point, Third Order Intercept point all exhibit a conformal agreement with the design specifications and tolerance. The input matching network is designed with a minimum NF thereby trading off a paltry value in gain. But the output matching network is optimized to achieve the desired gain, optimizing VSWR. To enhance further the performance of the amplifier, output matching network can be enriched with a defective structure on the ground plane.
- 出版日期2018-4
