A physical model with the effects of self-heating and variable resistance in above-threshold region for hydrogenated amorphous silicon thin film transistor

作者：Liu Yuan^*; Yao Ruo He; Li Bin

来源：Japanese Journal of Applied Physics, 2008, 47(6): 4436-4440.

DOI：10.1143/JJAP.47.4436

• amorphous silicon
• thin film transistor
• self-heating effect
• thermal resistance
• variable resistance
• non-saturating output current
• kink effect

A physical model that includes the effects of self-heating and variable resistance in the above-threshold region is presented for hydrogenated amorphous silicon thin film transistors (a-Si:H TFfs). The self heating effect is due to the low thermal conductivity of the gate insulator and the glass substrate. In order to predict the temperature rise as a function of device dimensions and material parameters, a steady-state thermal model derived from a system of coupled one-dimensional (I-D) energy equations and boundary conditions is presented. Then the developed thermal model is applied to study the self-heating effect in the a-Si:H TFT. In addition, the bulk resistance is decreased due to the the mechanism of space charge limited conduction in a n(+)-i-n(+) structure. By considering both the effects of self-heating and variable resistance, a physical model in the above-threshold region has been developed. Using this model, the non-saturating output current and kink effects can be accurately described for a typical a-Si:H T1717. The accuracy of the proposed model has been verified with the experimental data.

• 出版日期2008-6
• 单位华南理工大学