Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device

作者:Bernand Mantel A*; Seneor P; Bouzehouane K; Fusil S; Deranlot C; Petroff F; Fert A
来源:Physical Review B, 2011, 84(18): 180413.
DOI:10.1103/PhysRevB.84.180413

摘要

We investigate the magnetotransport characteristics of nanospintronics single-electron devices. The devices consist of single nonmagnetic nano-objects (nanometer-size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects with very different origins. The fact that the two effects are observed in similar samples demonstrates that a careful analysis of Coulomb blockade and magnetoresistance behaviors is necessary in order to discriminate them in magnetic single-electron devices. As a tool for further studies, we propose a simple way to determine if spin transport or the AMC effect dominates from the Coulomb blockade I-V curves of the spintronics device.

  • 出版日期2011-11-28