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摘要
In this paper intrinsic hydrogenated microcrystalline silicon (μc-Si:H) thin films and solar cells prepared by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD) method at high pressure are reported. Our experimental results demonstrated that either increasing plasma power or decreasing silane concentration always can lead to structural transition from amorphous silicon to microcrystalline silicon, and then the electrical properties changed along with the micro-structural evolution. By optimizing process parameters and using gas purifier, the oxygen concentration was prohibited effectively and then device-quality μc-Si:H thin films have been got at a relative high deposition rate. Their applications as absorber layers in single-junction μc-Si:H solar cells with 1.5 μm i-layer yielded conversion efficiency of 5.22% without ZnO back reflector and without optimizing p-layer and p/i interface.
