Doping, Tunnel Barriers, and Cold Carriers in InAs and InSb Nanowire Tunnel Transistors

作者：Sylvia Somaia Sarwat^*; Abul Khayer M; Alam Khairul; Lake Roger K

来源：IEEE Transactions on Electron Devices, 2012, 59(11): 2996-3001.

DOI：10.1109/TED.2012.2212442

• Cold-carrier injection
• InAs nanowire (NW)
• InSb NW
• inverse subthreshold slope
• tunnel field-effect transistor (TFET)
• voltage-controlled tunneling

InAs and InSb nanowire tunnel field-effect transistors require highly degenerate source doping to support the high electric fields in the tunnel region. For a target on-current of 1 mu A, the source Fermi energy lies in the range of 0.1-0.22 eV below the valence band edge depending on the material and diameter. Despite the large degeneracy, the devices achieve minimum inverse subthreshold slopes of similar to 30 mV/dec. In the subthreshold, these devices experience both regimes of %26quot;voltage-controlled tunneling%26quot; and %26quot;cold-carrier injection.%26quot; The reduction of the inverse subthreshold slope from each of these two processes is quantified. Numerical results based on a discretized eight-band k.p model are compared to analytical WKB theory. The standard WKB theory gives good qualitative agreement with the full-band numerical simulations.

• 出版日期2012-11