科研之友
微信
新浪微博
Facebook
分享链接
摘要
A very thin and amorphous TaWSiC film with relatively low resistivity of 233 mu Omega.cm was studied for its effectiveness as a diffusion barrier for copper interconnects. A 5 nm thick TaWSiC barrier effectively prevents copper diffusion and maintains structural integrity up to an annealing temperature of at least 550 degrees C, with copper silicide formation observed at 650 degrees C. In comparison, a barrier of 5 nm of nanocrystalline Ta already fails at 550 degrees C. Being very thin and amorphous, while having low resistivity and good thermal stability, are crucial properties of a good diffusion barrier for future technology, and this film meets these requirements.
- 出版日期2013-7-8
