A wideband LNA employing gate-inductive-peaking and noise-canceling techniques in 0.18 μm CMOS

作者：Bao Kuan; Fan Xiangning^*; Li Wei; Zhang Li; Wang Zhigong

来源：Chinese Journal of Semiconductors, 2012, 33(1).

DOI：10.1088/1674-4926/33/1/015003

• Chip areas
• CMOS processs
• Gain variations
• gate-inductive-peaking
• High-frequency noise
• Low noise
• Multi-standard radio
• noise-canceling
• Operating frequency bands
• Wide-band
• Wideband low-noise amplifier

This paper presents a wideband low noise amplifier (LNA) for multi-standard radio applications. The low noise characteristic is achieved by the noise-canceling technique while the bandwidth is enhanced by gate-inductive-peaking technique. High-frequency noise performance is consequently improved by the flattened gain over the entire operating frequency band. Fabricated in 0.18 μm CMOS process, the LNA achieves 2.5 GHz of -3 dB bandwidth and 16 dB of gain. The gain variation is within ±0.8 dB from 300 MHz to 2.2 GHz. The measured noise figure (NF) and average IIP3 are 3.4 dB and -2 dBm, respectively. The proposed LNA occupies 0.39 mm2 core chip area. Operating at 1.8 V, the LNA drains a current of 11.7 mA.

• 出版日期2012
• 单位东南大学