摘要

This paper reports about an efficient method for the numerical simulation of the electrical and optical characteristics, in both steady state and transient conditions, of free carrier injectionor depletion-based electro-optical active devices, based on the low cost technology of hydrogenated amorphous silicon (a-Si: H) and related semiconducting alloys, like a-SiC: H. In particular, our experimental results, recently achieved for low-loss, birefringence-free, single-modewaveguide-integrated phase modulators, are used to tune the many simulation parameters and validate the mixed electro-optic simulation environment. The tool is used to design a Mach-Zehnder Interferometer (MZI)-based modulator enhancing the performances of previous realized devices.

  • 出版日期2014-7-1