A theoretical model for Schottky diodes for excluding the sneak current in cross bar array resistive memory

作者：Kim Gun Hwan; Kim Kyung Min; Seok Jun Yeong; Lee Hyun Ju; Cho Deok Yong; Han Jeong Hwan; Hwang Cheol Seong^*

来源：Nanotechnology, 2010, 21(38): 385202.

DOI：10.1088/0957-4484/21/38/385202

Kirchhoff's law was used to examine the electrical specifications of selection diodes, which are essential for suppressing the read interference problems in nano-scale resistive switching cross bar arrays with a high block density. The diode in the cross bar array with a 100 Mb block density should have a reverse/forward resistance ratio of > 10(8), and a forward current density of > 10(5) A cm(-2) for stable reading and writing operation. Whilst normal circuit simulators are heavily overloaded when the number of cells (m) connected to one bit and word line is larger (m >> 100), which is the desired range for high density cross bar arrays, the present model can provide a simple simulation. The validity of this new method was confirmed by a comparison with the previously reported method based on a voltage estimation.

• 出版日期2010-9-24