MEMS magnetic field sensor based on silicon bridge structure

作者：Guangtao Du; Xiangdong Chen^*; Qibin Lin; Hui Li; Huihui Guo

来源：Chinese Journal of Semiconductors, 2010, 31(10).

DOI：10.1088/1674-4926/31/10/104011

• ANSYS simulation
• Ferromagnetic magnet
• Magnetic field sensor
• Magnetic pressure
• Silicon bridge

A MEMS piezoresistive magnetic field sensor based on a silicon bridge structure has been simulated and tested. The sensor consists of a silicon sensitivity diaphragm embedded with a piezoresistive Wheatstone bridge, and a ferromagnetic magnet adhered to the sensitivity diaphragm. When the sensor is subjected to an external magnetic field, the magnetic force bends the silicon sensitivity diaphragm, producing stress and resistors change of the Wheatstone bridge and the output voltage of the sensor. Good agreement is observed between the theory and measurement behavior of the magnetic field sensor. Experimental results demonstrate that the maximum sensitivity and minimum resolution are 48 mV/T and 160 μT, respectively, making this device suitable for strong magnetic field measurement. Research results indicate that the sensor repeatability and dynamic response time are about 0.66% and 150 ms, respectively. ? 2010 Chinese Institute of Electronics.

• 出版日期2010
• 单位西南交通大学