A systematic study of BNL's 3D-Trench Electrode detectors

作者：Montalbano, A^*; Bassignana, D; Li, Z; Liu, S; Lynn, D; Pellegrini, G; Tsybychev, D

来源：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment , 2014, 765: 23-28.

DOI：10.1016/j.nima.2014.03.066

• 3D electrode Si detectors
• Radiation damage
• Radiation hardness
• 3D-Trench Electrode detectors

New types of silicon pixel detectors have been proposed because of the need for more radiation hard semiconductor devices for the high luminosity tracking detector upgrades at the Large Hadron A novel type of 3D Si pixel detectors is proposed, with each cell of the 3D-Trench Electrode pixel detector featuring a concentric trench electrode surrounding the central collecting column electrode. The pixel sensor is an array of those individual cells. Systematic 3D simulations using Silvacos TCAD programs have been carried out to study the characteristics of this novel 3D pixel design and to compare to the traditional 3D column electrode pixel design. The 3D simulations show a much lower depletion voltage and a more uniform electric field in the new 3D-Trench Electrode pixel detectors as compared to the traditional 3D column Electrode detectors. The first prototype 3D-Trench Electrode pixel detectors have been manufactured at the Centro Nacional De Microelectronica. Preliminary electrical measurements are discussed and charge collection efficiency measurements are presented.

• 出版日期2014-11-21
• 单位湘潭大学; 西安交通大学