科研之友
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摘要
We propose a novel scheme of transverse injection of assisted-light into the active region of a semiconductor optical amplifier through a transparent electrode, for fast gain recovery. Numerical results based on a well-established model for gain recovery show that the gain recovery is approximately eight times faster than the earlier reported scheme of counter-propagating assisted-light. The dependence of gain recovery on bias current and power of the assisted-light in the proposed scheme have been studied. The analysis also shows full gain recovery for the 40-GHz signal, and partial gain recovery for the 100-GHz signal.
- 出版日期2014-5-1
