摘要

A stable and very bright white organic light-emitting diode (WOLED) was fabricated with the structure ITO/m-MTDATA (30 nm)/NPB (30 nm)/DPVBi (11 nm)/Alq(3):DCJTB(50 nm)/LiF(1 nm)/Al (250 nm). White light emission was achieved by combining blue and orange emissions emitted from DPVBi and Alq(3):DCJTB layers, respectively. Inserting an m-MTDATA layer between ITO and NPB improved the charge balance in the recombination zone, improving the stability of the emission color of WOLED. The maximum luminance was 20 590 cd/m(2) at 13 V with CIE coordinates of x=0.30, y=0.31. The maximum power and current efficiencies were 6.01 lm/W at 5 V and 6.2 cd/A at 5 V, respectively. Conversely, the WOLED without an m-MTDATA buffer layer exhibited unstable emission characteristic.

  • 出版日期2006-10-15