Analysis of Interface States and Series Resistance in Ag/m-Plane ZnO Schottky Diodes

作者：Kim Hogyoung; Kim Haeri; Kim Dong Wook

来源：Journal of the Korean Physical Society, 2013, 63(10): 2034-2038.

DOI：10.3938/jkps.63.2034

• Interface states
• m-plane ZnO
• Series resistance

The effect of interfaces states on the electrical properties in Ag/m-plane ZnO Schottky contacts was investigated using both current-voltage (I-V) and capacitance-voltage (C-V) measurements. The measured C - V characteristics showed strong dependences on the bias voltage and frequency. The interface state densities from the I - V characteristics were found to vary from 1.72 x 10(13) eV(-1) cm(-2) at E-C-0.32 eV to 1.68 x 10(12) eV(-1) cm(-2) at E-C-0.54 eV. The interface state densities from the conductance-frequency (G/omega - f) characteristics also were within this range. The series resistance vs. voltage (R-S - V) plot showed a peak in the small forward bias region (0 similar to 0.5 V), which was attributed to the contribution of interface states to the series resistance.

• 出版日期2013-11