Photoresist Passivation Structures for Laser Lifted-Off Light Emitting Diodes

作者：Kim Sunjung^*

来源：Electrochemical and Solid-State Letters, 2010, 13(7): H240-H243.

DOI：10.1149/1.3416375

SU-8 photoresist passivation structures were used to protect vertical structure GaN-based light emitting diodes from explosive forces produced during the laser lift-off (LLO) process of a sapphire substrate. The soft bake time of SU-8, which determines the solvent content, was varied to measure the mechanical properties of SU-8 at different dilution ratios. The SU-8 attained a sufficient hardness of 0.23 GPa and a Young's modulus greater than 4.0 GPa, regardless of soft bake time and dilution ratio. The SU-8 passivation structures with good damping properties showed excellent protection of the weak GaN-based layers from the LLO process.

• 出版日期2010