Embedded Detection and Correction of SEU Bursts in SRAM Memories Used as Radiation Detectors

作者：Secondo R^*; Foucard G; Danzeca S; Losito R; Peronnard P; Masi A; Brugger M; Dusseau L

来源：IEEE Transactions on Nuclear Science, 2016, 63(4): 2168-2175.

DOI：10.1109/TNS.2016.2521485

• FPGA
• multiple cell upsets (MCU)
• radiation monitoring
• single event upsets (SEUs)
• single-event effects (SEEs) characterization
• SRAM monitor

SRAM memories are widely used as particle fluence detectors in high radiation environments, such as in the Radiation Monitoring System (RadMon) currently in operation in the CERN accelerator complex. Multiple Cell Upsets (MCUs), arising from micro-latchup events, are characterized by a large number of SEUs, ultimately affecting the measurement of particle fluxes and resulting in corrupted data and accuracy losses. A study of the generation of this type of SEU bursts was performed on an 8 Mbit 90-nm SRAM memory. Experimental tests were carried out with a focused beam of protons on target as well as in a mixed field environment dominated by high energy hadrons. A solution approach using an on-line detection and correction algorithm embedded on an FPGA was investigated and evaluated for use on a RadMon device.

• 出版日期2016-8