Activation of Si implants into InAs characterized by Raman scattering

作者：Lind A G; Martin T P Jr; Sorg V C; Kennon E L; Truong V Q; Aldridge H L; Hatem C; Thompson M O; Jones K S

来源：Journal of Applied Physics, 2016, 119(9): 095705.

DOI：10.1063/1.4942880

Studies of implant activation in InAs have not been reported presumably because of challenges associated with junction leakage. The activation of 20 keV, Si+ implants into lightly doped (001) p-type bulk InAs performed at 100 degrees C as a function of annealing time and temperature was measured via Raman scattering. Peak shift of the L+ coupled phonon-plasmon mode after annealing at 700 degrees C shows that active n-type doping levels approximate to 5 x 10(19) cm(-3) are possible for ion implanted Si in InAs. These values are comparable to the highest reported active carrier concentrations of 8-12 x 10(19) cm(-3) for growth-doped n-InAs. Raman scattering is shown to be a viable, non-contact technique to measure active carrier concentration in instances where contact-based methods such as Hall effect produce erroneous measurements or junction leakage prevents the measurement of shallow n(+) layers, which cannot be effectively isolated from the bulk.

• 出版日期2016-3-7