Mechanism of compensation of the donor impurity in the near-surface layer of gap during heat treatment in phosphorus vapors

作者：Krutogolov Yu K^*

来源：Semiconductors, 2010, 44(6): 752-760.

DOI：10.1134/S1063782610060114

The secondary ion mass spectrometry and capacitance-voltage measurements have been used to study the mechanism of formation of the near-surface layer with a low concentration of uncompensated donors in n-GaP grown by vapor-phase epitaxy and subjected to heat treatment at different pressures of phosphorus vapors. The dependence of the thickness of the mentioned layer on the pressure of phosphorus vapors has a minimum at a pressure of (1.5 +/- 0.5) x 10(3) Pa. It is shown that at vapor pressures above the mentioned value, the interstitial P, which forms a deep electron trap, is a suitable candidate for the role of compensating acceptor. At low pressures, the probable compensating center is the P vacancy giving rise to a deep level with the energy Ec-(0.21 +/- 0.01) eV. At 700A degrees C, the effective diffusivity of interstitial P is a parts per thousand(3 +/- 1) s- 10(-15) cm(2)/s, while that of the P vacancy is a parts per thousand(3 +/- 1) x 10(-14) cm(2)/s.

• 出版日期2010-6