Nanocrystalline Diamond Gate FET for ON-State Current Improvement

作者：Kim Chang Hoon^*; Lee Wook Seong; Choi Yang Kyu

来源：IEEE Electron Device Letters, 2010, 31(10): 1152-1154.

DOI：10.1109/LED.2010.2058992

• Diamond gate
• high-performance field-effect transistor
• nanocrystalline diamond
• strain effect
• stress effect

A nanocrystalline diamond gate field-effect transistor (FET) is demonstrated for the improvement of ON-state current with a CMOS-compatible process. A nanocrystalline diamond film was deposited on a Si(3)N(4)/SiO(2) gate dielectric as a gate material. The diamond thin film served as a gate electrode; hence, an n-channel FET was successfully demonstrated. As a control group, a polysilicon gate FET with the same structure was also fabricated. Compared to the polysilicon gate FET, the diamond gate FET showed doubled ON-state current, which was primarily attributed to the strain effect of the diamond gate acting on the channel.

• 出版日期2010-10