Mid-IR laser oscillation in Cr2+:ZnSe planar waveguide

作者：Williams J E^*; Fedorov V V; Martyshkin D V; Moskalev I S; Camata R P; Mirov S B

来源：Optics Express, 2010, 18(25): 25999-26006.

DOI：10.1364/OE.18.025999

We demonstrate 2.6 mu m mid-infrared lasing at room temperature in a planar waveguide structure. Planar waveguides were fabricated using pulsed laser deposition (PLD) by depositing chromium doped zinc selenide thin films on sapphire substrate (Cr2+: ZnSe/sapphire). Highly doped Cr2+:ZnSe/Sapphire thin film sample was also used to demonstrate passive Q-switching of Er:YAG laser operating at 1.645 mu m.

• 出版日期2010-12-6