All solid-state high repetitive sub-nanosecond risetime pulse generator based on bulk gallium arsenide avalanche semiconductor switches

作者：Hu, Long^*; Su, Jiancang; Ding, Zhenjie; Hao, Qingsong; Fan, Yajun; Liu, Chunliang

来源：Review of Scientific Instruments, 2016, 87(8): 086107.

DOI：10.1063/1.4960397

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An all solid-state high repetitive sub-nanosecond risetime pulse generator featuring low-energy-triggered bulk gallium arsenide (GaAs) avalanche semiconductor switches and a step-type transmission line is presented. The step-type transmission line with two stages is charged to a potential of 5.0 kV also biasing at the switches. The bulk GaAs avalanche semiconductor switch closes within sub-nanosecond range when illuminated with approximately 87 nJ of laser energy at 905 nm in a single pulse. An asymmetric dipolar pulse with peak-to-peak amplitude of 9.6 kV and risetime of 0.65 ns is produced on a resistive load of 50 Omega. A technique that allows for repetition-rate multiplication of pulse trains experimentally demonstrated that the parallel-connected bulk GaAs avalanche semiconductor switches are triggered in sequence. The highest repetition rate is decided by recovery time of the bulk GaAs avalanche semiconductor switch, and the operating result of 100 kHz of the generator is discussed. Published by AIP Publishing.

• 出版日期2016-8
• 单位西北核技术研究所; 西安交通大学