Analysis of metal insulator transitions in VO2 and V2O3 for RRAMs

作者：Guo Yuzheng; Robertson John^*

来源：Microelectronic Engineering, 2013, 109: 278-281.

DOI：10.1016/j.mee.2013.03.015

• RRAM
• Metal insulator transition
• VO2
• V2O3
• Calculation

VO2 and V2O3 are compared in terms of their use in oxide based resistive random access memories. The electronic properties of VO2 and V2O3 have been calculated with the screened exchange hybrid functional. It is shown that metal-insulator transition could be described in the generalised density functional theory. The atomic and electronic structures are in good agreement with the experiments. The properties of VO2 and V2O3 are compared. It is suggested that V2O3 has some advantages over VO2 for RRAM design.

• 出版日期2013-9