Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases

作者：Zhao Y; Chen W; Li W; Zhu M; Yue Y; Song B; Encomendero J; Sensale Rodriguez B; Xing H; Fay P^*

来源：Applied Physics Letters, 2014, 105(17): 173508.

DOI：10.1063/1.4900964

In this work, signatures of plasma waves in GaN-based high electron mobility transistors were observed by direct electrical measurement at room temperature. Periodic grating-gate device structures were fabricated and characterized by on-wafer G-band (140-220 GHz) s-parameter measurements as a function of gate bias voltage and device geometry. A physics-based equivalent circuit model was used to assist in interpreting the measured s-parameters. The kinetic inductance extracted from the measurement data matches well with theoretical predictions, consistent with direct observation of plasma wave-related effects in GaN-channel devices at room temperature. This observation of electrically significant room-temperature plasma-wave effects in GaN-channel devices may have implications for future millimeter-wave and THz device concepts and designs.

• 出版日期2014-10-27