Negative differential resistance behavior in doped C-82 molecular devices

作者：Xu Hui^*; Jia Shu-ting; Chen Ling-na

来源：Journal of Central South University, 2012, 19(2): 299-303.

DOI：10.1007/s11771-012-1004-7

• electronic transport properties
• negative differential resistance
• first-principle
• molecular device

By using the first-principle calculations and nonequilibrium Green functions method, the electronic transport properties of molecular devices constructed by C-82, C80BN and C80N2 were studied. The results show that the electronic transport properties of molecular devices are affected by doped atoms. Negative differential resistance (NDR) behavior can be observed in certain bias regions for C-82 and C80BN molecular devices but cannot be observed for C80N2 molecular device. A mechanism for the negative differential resistance behavior was suggested.

• 出版日期2012-2
• 单位南华大学; 中南大学