Size-dependent recombination dynamics in ZnO nanowires

作者：Reparaz J S^*; Gueell F; Wagner M R; Hoffmann A; Cornet A; Morante J R

来源：Applied Physics Letters, 2010, 96(5): 053105.

DOI：10.1063/1.3294327

• excitons
• II-VI semiconductors
• nanowires
• surface recombination
• surface states
• wide band gap semiconductors
• zinc compounds

A deep understanding of the recombination dynamics of ZnO nanowires (NWs) is a natural step for a precise design of on-demand nanostructures based on this material system. In this work we investigate the influence of finite-size on the recombination dynamics of the neutral bound exciton around 3.365 eV for ZnO NWs with different diameters. We demonstrate that the lifetime of this excitonic transition decreases with increasing the surface-to-volume ratio due to a surface induced recombination process. Furthermore, we have observed two broad transitions around 3.341 and 3.314 eV, which were identified as surface states by studying the dependence of their life time and intensitiy with the NWs dimensions.

• 出版日期2010-2-1