Nanometer-thin sputtered phosphorus layers for laser-doped solar cells

作者：Eisele S J^*; Saemann M; Bilger G

来源：Surface and Interface Analysis, 2010, 42(10-11): 1573-1574.

DOI：10.1002/sia.3580

• sputtered phosphorus
• precursor layer
• laser doping
• silicon solar cell
• X-ray characterization

Sputtered phosphorus precursor layers for laser-doped silicon solar cell emitters lead to a new record energy conversion efficiency eta = 18.9% in full-area laser-doped solar cells. Layer characterization with XPS and SIMS enables us to understand the influence of ambient air and native oxide on pure phosphorus precursor layers. Removing the native oxide from the silicon surface serves for less formation of H(3)PO(4) increasing the quality of laser-doped emitters. The native oxide layer favors the formation of radical OH(-) groups during the sputtering process. These OH(-) groups undergo a reaction with the phosphorus layer, resulting in a larger part of H(3)PO(4).

• 出版日期2010-11