A Silicon-on-Insulator-Based Dual-Gain Charge-Sensitive Pixel Detector for Low-Noise X-ray Imaging for Future Astronomical Satellite Missions

作者：Shrestha Sumeet; Kawahito Shoji^*; Kamehama Hiroki; Nakanishi Syunta; Yasutomi Keita; Kagawa Keiichiro; Teranishi Nobukazu; Takeda Ayaki; Tsuru Takeshi Go; Kurachi Ikuo; Arai Yasuo

来源：Sensors, 2018, 18(6): 1789.

DOI：10.3390/s18061789

• active pixel sensor
• charge sensitive amplifier
• dual gain
• high energy astrophysics
• SOI pixel
• spectroscopic performance
• X-ray detector

In this paper, we report on the development of a monolithic active pixel sensor for X-ray imaging using 0.2 mu m fully depleted silicon-on-insulator (SOI)-based technology to support next generation astronomical satellite missions. Detail regarding low-noise dual-gain SOI based pixels with a charge sensitive amplifier and pinned depleted diode sensor structure is presented. The proposed multi-well sensor structure underneath the fully-depleted SOI allows the design of a detector with low node capacitance and high charge collection efficiency. Configurations for achieving very high charge-to-voltage conversion gain of 52 mu V/e(-) and 187 mu V/e(-) are demonstrated. Furthermore, in-pixel dual gain selection is used for low-noise and wide dynamic range X-ray energy detection. A technique to improve the noise performance by removing correlated system noise leads to an improvement in the spectroscopic performance of the measured X-ray energy. Taken together, the implemented chip has low dark current (44.8 pA/cm(2) at -30 degrees C), improved noise performance (8.5 e(-) rms for high gain and 11.7 e(-) rms for low gain), and better energy resolution of 2.89% (171 eV FWHM) at 5.9 keV using Fe-55 and 1.67% (234 eV FWHM) at 13.95 keV using Am-241.

• 出版日期2018-6