Universal Ratio of Coulomb Interaction to Geometric Quantization in (In, Ga)As/GaAs Quantum Dots

作者：Bayer M^*; Ludwig A; Wieck A

来源：Physics of the Solid State, 2018, 60(8): 1629-1634.

DOI：10.1134/S1063783418080024

We study the photoluminescence of self-assembled (In,Ga)As/GaAs quantum dot ensembles with varying confinement potential height. The low energy shift of the s-shell emission with increasing excitation power gives a measure of the Coulomb interaction in these structures as it results from carrier-carrier interactions between the optically injected exciton complexes. When dividing this shift by the dot level splitting, determined by the geometric confinement, we obtain a universal function of the number of involved excitons that is independent of the confinement potential height. This shows an identical scaling of Coulomb interaction and geometric quantization with varying confinement.

• 出版日期2018-8
• 单位TU Dortmund