科研之友
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摘要
A high efficiency Ka-band GaN high power amplifier (HPA) utilizing 0.15-mu m gallium nitride (GaN) high electron mobility transistor (HEMT) technology is presented in this letter. The MMIC is designed with load-pull method, with the final stage matched to compromise between output power and power added efficiency (PAE). An output power of more than 43 dBm and a power added efficiency of more than 30% over the band of 33-37 GHz under a drain voltage of 24 V at 100 mu s pulse-width and 10% duty-cycle have been achieved. The chip size is 2.8 mm x 3.4 mm ( 9.52 mm(2)).
- 出版日期2017-10
- 单位东南大学
