科研之友
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摘要
Thermally activated dislocation emission in high-temperature ferroelectric ceramics is investigated through an assumption of thermal stability and a novel analytical method. The stress intensity factor (SIF) arising from domain switching is evaluated by using a Green's function method, and the critical applied electric field intensity factor (CAEFIF) for brittle fracture at room temperature is obtained. Besides, the lowest temperature for single dislocation emission before brittle fracture is also obtained by constructing an energy balance. The multi-scale analysis of facture toughness of the ferroelectric ceramics at high temperature is carried out. Through the analysis, the CAEFIF for crack extension is recalculated. The results show that the competition and interaction effects between dislocation emission and brittle fracture are very obvious. Besides, the higher critical activation temperature, the more columns of obstacles will be overcome. Additionally, the shielding effect arising from thermally activated dislocations is remarkable, thus, the brittle-ductile transition can promote the fracture toughness of high-temperature ferroelectric ceramics.
