High-program/erase-speed SONOS with in situ silicon nanocrystals

作者：Chiang Tsung Yu^*; Chao Tien Sheng; Wu Yi Hong; Yang Wen Luh

来源：IEEE Electron Device Letters, 2008, 29(10): 1148-1151.

DOI：10.1109/LED.2008.2002944

• memory window
• nonvolatile memory
• retention time
• silicon nanocrystals (Si-NC)

In this letter, for the first time, we have successfully fabricated silicon-oxide-nitride-oxide-silicon (SONOS) devices with embedded silicon nanocrystals (Si-NCs) in silicon nitride using in situ method. This process is simple and compatible to modern IC processes. Different Si-NCs deposition times by in situ method were investigated at first. SONOS devices with embedded Si-NCs in silicon nitride exhibit excellent characteristics in terms of larger memory windows (> 5.5 V), lower operation voltage, high P/E speed, and longer retention time (> 10(8) s for 13% charge loss).

• 出版日期2008-10