A Top-down Approach to Fabrication of High Quality Vertical Heterostructure Nanowire Arrays

作者：Wang Hua; Sun Minghua; Ding Kang; Hill Martin T; Ning Cun Zheng^*

来源：Nano Letters, 2011, 11(4): 1646-1650.

DOI：10.1021/nl2001132

• Reactive ion etching
• photoluminescence linewidth
• semiconductor nanowires
• longitudinal heterostructure
• top-down fabrication
• self-masking

We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of. complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer. This top down, mask free, large scale approach is compatible with the established device fabrication processes and could serve as an important alternative to the bottom up approach, significantly expanding ranges and varieties of applications of nanowire technology.

• 出版日期2011-4