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摘要
This paper numerically explores the possibility of high efficiency, ultrathin, and stable CdTe cells with different back surface field (BSF) using well accepted simulator AMPS-1D (analysis of microelectronics and photonic structures). Amodified structure of CdTe based PV cell SnO2/Zn2SnO4/CdS/CdTe/BSF/BC has been proposed over reference structure SnO2/Zn2SnO4/CdS/CdTe/Cu. Both higher bandgap materials like ZnTe and Cu-2 Te and low bandgap materials like As-2 Te-3 and Sb-2 Te-3 have been used as BSF to reduce minority carrier recombination loss at the back contact in ultra-thin CdTe cells. In this analysis the highest conversion efficiency of CdTe based PV cell without BSF has been found to be around 17% using CdTe absorber thickness of 5 mu m. However, the proposed structures with different BSF have shown acceptable efficiencies with an ultra-thin CdTe absorber of only 0.6 mu m. The proposed structure with As-2 Te-3 BSF showed the highest conversion efficiency of 20.8% (V-oc = 0.99 V-,V- J(sc) = 24.73 mA/cm(2), and FF = 0.84). Moreover, the proposed structures have shown improved stability in most extents, as it was found that the cells have relatively lower negative temperature coefficient. However, the cell with ZnTe BSF has shown better overall stability than other proposed cells with temperature coefficient (TC) of -0.3%/degrees C.
- 出版日期2013
