Ultrathin high anisotropic magnetoresistance Ni0.81Fe0.19 films

作者：Li Haifeng^*; Yu Guanghua; Teng Jiao; Zhu Fengwu

来源：Journal of Physics D: Applied Physics , 2006, 39(23): 4915-4919.

DOI：10.1088/0022-3727/39/23/002

We have fabricated an ultrathin high anisotropic magnetoresistance (AMR) Ni0.81Fe0.19 (10.0 nm) film grown on a (Ni0.81Fe0.19) Cr-0.63(0.37) (5.5 nm) underlayer with dc magnetron sputtering. The AMR value (Delta R/R) and the coercivity of the film attain 1.61(6)% and 178Am(-1) (i. e. 2.2 Oe), respectively. The Delta R/R of (Ni0.81Fe0.19)(0.63)Cr-0.37(5.5 nm)/ Ni0.81Fe0.19(10.0 nm) film has increased by similar to 34% over that of Ta(5.4 nm)/Ni0.81Fe0.19(10.0 nm) film (Delta R/R = 1.20(6)%) prepared using the same magnetron sputtering. The results of x-ray diffraction and atomic force microscopy show that the underlayer of (Ni0.81Fe0.19)(0.63)Cr-0.37 makes it easier to promote the formation of Ni0.81Fe0.19(111) texture and dramatically improves the crystalline grain size in the columnar direction and the average surface grain size of the Ni(0.81)Fe(0.19)film. The result of x-ray photoelectron spectroscopy shows that the (Ni0.81Fe0.19) Cr-0.63(0.37) underlayer, unlike the traditional Ta, does not react with the Ni0.81Fe0.19 film at the interface.

• 出版日期2006-12-7
• 单位北京科技大学