A 65 GHz LNA/Phase Shifter With 4.3 dB NF Using 45 nm CMOS SOI

作者：Uzunkol Mehmet^*; Rebeiz Gabriel M

来源：IEEE Microwave and Wireless Components Letters, 2012, 22(10): 530-532.

DOI：10.1109/LMWC.2012.2218651

• 45 nm CMOS
• low noise amplifier (LNA)
• millimeter-wave
• phase shifter

This letter presents the first 45 nm CMOS SOI LNA/phase shifter for 60 GHz applications. The 3 b phase shifter is designed using a switched-LC approach and results in only 6 dB loss at 65 GHz. The LNA/phase shifter front-end results in a gain of 6.5 dB, a noise figure of 4.3 dB, and an input P1-dB of -13.5 dBm (limited by the amplifier) with a power consumption of 15 mW. This work shows that advanced CMOS processes are essential for low power, medium linearity 60 GHz phased arrays.

• 出版日期2012-10