Analytical modeling of cutoff frequency variability reserving correlations due to random dopant fluctuation in nanometer MOSFETs

作者：Lu, Wei-feng^*; Wang, Guang-yi; Sun, Ling-ling

来源：Solid-State Electronics, 2015, 105: 63-69.

DOI：10.1016/j.sse.2014.12.024

• Cutoff frequency
• Analytical modeling
• Nanometer MOSFET
• Random dopant fluctuation

Correlations are concerned for modeling of CMOS devices and circuits variability when using back propagation of variations (BPV) methodology in the paper. Strong reverse correlations are observed and investigated between variation parameters, particularly for threshold voltage (V-T), total gate capacitance (C-gg) and trans-conductance (g(m)), on gate voltage dependence due to random dopant fluctuation (RDF) in nanometer MOSFETs. These correlations are verified both in theoretical and simulation approaches. Based on these correlations, a simple and accurate analytical model for capturing f(T) variability is proposed. The model is in good agreement with HSPICE Monte Carlo simulations in different design decisions such as effective width length ratios, source voltages and doping concentrations. Results show the estimation errors are not more than -2.33% and 1.30% for HMOS and PMOS, respectively. Furthermore, our analysis of the correlation and analytical formula are still effective for the continued scaling CMOS technology.

• 出版日期2015-3
• 单位杭州电子科技大学