Promotion of [001]-oriented L1(0)-FePt by rapid thermal annealing with light absorption layer

作者：Wang Liang Wei; Shih Wen Chieh; Wu Yun Chung; Lai Chih Huang^*

来源：Applied Physics Letters, 2012, 101(25): 252403.

DOI：10.1063/1.4772072

Highly [001]-oriented L1(0)-FePt grown on SiO2 parallel to Si is achieved by using rapid thermal annealing (RTA) at 400 degrees C. Due to the dramatic divergence of light absorption ability between Si and FePt films, Si behaves as the light absorption layer to absorb more light emitted from RTA system, which gives rise to larger thermal expansion on Si and induces in-plane tensile stress on FePt films. By raising heating rate during RTA, the transient light intensity is increased; therefore, higher in-plane tensile stress on FePt films is generated, which effectively suppresses the opening-up of in-plane hysteresis loops.

• 出版日期2012-12-17
• 单位清华大学