Atomic layer deposition of Pt growth template for orienting PbZrxTi1-xO3 thin films

作者：Potrepka Daniel M^*; Sanchez Luz M; Polcawich Ronald G

来源：Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films , 2012, 30(1): 01A129.

DOI：10.1116/1.3664766

Atomic layer deposition (ALD) offers a method for sidewall growth due to its ability to deposit isotropic thin films. As a first step to provide underlying growth templates on sidewalls, proof-of-principal depositions were made on flat wafer surfaces using ALD Pt thin films deposited on: ALD HfO2, ALD Al2O3, and oxidized sputtered-Ti films. X-ray diffraction rocking curve full-width half maxima for 25 nm Pt films obtained after a rapid thermal anneal at 700 degrees C were 2.06 degrees, 5.45 degrees, and 7.84 degrees on the TiO2, Al2O3, and HfO2 coatings, respectively. Sheet resistance decreased with Pt thickness (deposited onto TiO2/SiO2/Si): from 5 Omega/square at 25 nm to 0.63 Omega/square at 100 nm. A 500 +/- 25 nm PbZr0.52Ti0.48O3 film was deposited by a chemical solution deposition process onto 100 nm ALD Pt films deposited on the TiO2/SiO2/Si substrates. The 001 Lotgering factor derived from x-ray diffraction data was 0.56 for 001/100 oriented PbZr0.52Ti0.48O3.

• 出版日期2012-1