A ultra-high speed 1:2 demultiplexer in SiGe-HBT technology

作者：Hu Zhengfei^*; Chen Yingmei

来源：2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010, 2010-05-08 to 2010-05-11.

DOI：10.1109/ICMMT.2010.5525002

• Chip areas
• Clock buffer
• Core circuit
• Demultiplexers
• High gain
• Input and outputs
• Input datas
• Input signal
• Internal signals
• Optical fiber communication systems
• Output data
• Output signal
• Power Consumption
• Power supply
• SiGe BiCMOS technology
• SiGe-HBT technology
• Transient frequency
• Ultra high speed
• Voltage levels
• Wide bandwidth

This paper describes an ultra high speed 1:2 demultiplexer in optical fiber communication system utilizing SiGe BiCMOS technology. The transient frequency fT of the 0.25 μm SiGe:C npn-HBT';s devices is up to 190 GHz and the fmax is 220 GHz. The Latch of the demultiplexer core circuit has been researched. Limited by existing measure condition, a high gain and wide bandwidth clock buffer is designed to drive large load. Transmission line theory of ultra high speed circuits is utilized to design match network and to solve the match problem of input signal, output signal and internal signal. The transient analysis shows this demultiplexer can demultiplex one 100-Gb/s input data into two 50-Gb/s output data. The chip area of this 1:2 demultiplexer is 0.7 mm × 0.47 mm, the input and output data are all standard 400 mV P-P PCML voltage level, and power consumption of the IC is 900 mW at a power supply of -4 V.

• 出版日期2010
• 单位南京邮电大学