Al-doping effects on the photovoltaic performance of inverted polymer solar cells

作者：Yu, Xuan; Shi, Ya-feng; Yu, Xiao-ming; Zhang, Jian-jun; Ge, Ya-ming; Chen, Li-qiao; Pan, Hong-jun

来源：Optoelectronics Letters, 2016, 12(2): 106-109.

DOI：10.1007/s11801-016-6003-8

• Atomic percentage
• Carrier recombination
• Device performance
• Electron transport
• Inverted polymer solar cells
• Photovoltaic performance
• Power conversion efficiencies
• Properties of Al

The properties of Al-doped ZnO (AZO) play an important role in the photovoltaic performance of inverted polymer solar cells (PSCs), which is used as electron transport and hole blocking buffer layers. In this work, we study the effects of Al-doping level in AZO on device performance in detail. Results indicate that the device performance intensely depends on the Al-doping level. The AZO thin films with Al-doping atomic percentage of 1.0% possess the best conductivity. The resulting solar cells show the enhanced short current density and the fill factor (FF) simultaneously, and the power conversion efficiency (PCE) is improved by 74%, which are attributed to the reduced carrier recombination and the optimized charge transport and extraction between AZO and the active layer.

• 出版日期2016-3-1
• 单位南开大学