摘要

The lead selenide material sensitization via O+ beam implantation at 50 key is demonstrated. The structural and morphological characterizations suggest that the resulting material is of polycrystalline solids with the grain size of. similar to 700 nm. Compared with the conventional oxygen diffused material, the ion prepared polycrystalline material exhibits higher optical absorption, carrier mobility and photo-responsivity. The optical characterizations reveal that it is structurally well-ordered with the optical bandgap of similar to 0.22 eV and Urbach energy as small as 34.6 meV at room temperature. It is revealed that the high responsivity may be attributed to its effective optical absorption in mid-infrared regime and high carrier mobility, induced by the ion beam modifications. This technique may provide an effective method to synthesize the lead chalcogenide polycrystalline materials and relevant nanomaterials for high optical and optoelectronic properties.