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摘要
A stacked power amplifier (PA) using 2-mu m GaAs HBT process is presented for 2.4 GHz application. The stacked configuration can increase the output power by raising the supply voltage of the circuit. Additionally, a novel inter-stage matching technique with series RC is proposed to suppress the efficiency degradation caused by the parasitic capacitance. The measurement results show the compensation technique improves PAE by more than 6%, while the error vector magnitude (EVM) is enhanced. And the fabricated PA shows a gain of 23.7 dB and a saturated output power of 32 dBm with PAE of 50%, while the EVMs are lower than 3% up to 26 dBm of OFDM/64QAM output power.
- 出版日期2013
- 单位东南大学
