科研之友
微信
新浪微博
Facebook
分享链接
摘要
This paper presents a cryogenic successive approximation register (SAR) based analog to digital converter (ADC) in standard 0.35 mu m complementary metal oxide semiconductor (CMOS) technology that functions from 300 K (room temperature) down to 20 K. It has been designed to operate in low temperature mid- and far-infrared imaging systems. In order to ensure the circuit performance at the extreme temperatures, a dedicated integral-based comparator architecture is employed. SPICE models have been developed for circuit simulation at 20 K. At 20 K, the experimental results exhibit that the ADC achieves 1.6 LSB maximum differential nonlinearity (DNL), 1.7 LSB maximum integral nonlinearity (INL), and 10.4 effective number of bits (ENOB) at 100 kS/s sampling rate with a current consumption of 75 mu A from a 3.3 V supply.
- 出版日期2013-6
- 单位辽宁大学
