Analysis of GaN-based light-emitting diodes degraded by generation of deep-level states

作者：Jung Eunjin; Kim Hyunsoo^*

来源：Physica Status Solidi A-Applications and Materials Science, 2014, 211(8): 1764-1768.

DOI：10.1002/pssa.201330501

• deep levels
• GaN
• light-emitting diodes
• variable range hopping

GaN-based light-emitting diodes (LEDs) degraded by the generation of deep-level states were analyzed by means of temperature dependent current-voltage measurements. After accelerated aging test of LEDs, the density of deep-level states was found to increase by a factor of similar to 5.0, which resulted in an increase in junction temperature of 7 degrees C associated with increased nonradiative recombination. %26lt;br%26gt;[GRAPHICS] %26lt;br%26gt;The optical microscopy images of LEDs under zero bias (left) and 50 mu A (right).

• 出版日期2014-8