Novel Poly-Si SJ-LDMOS for System-on-Panel Applications

作者：Tsai Jhen Yu; Hu Hsin Hui^*

来源：IEEE Transactions on Electron Devices, 2016, 63(6): 2482-2487.

DOI：10.1109/TED.2016.2554609

• High-voltage thin-film transistor (HVTFT)
• lateral doubled-diffused MOSFET (LDMOS)
• superjunction (SJ)

A superjunction lateral doubled-diffused MOSFET (SJ-LDMOS) that is based on thin-film transistor technology is proposed. To optimize the breakdown voltage (V-BD) and specific ON-resistance (R-SP), a new structure called TRI-SJ LDMOS, with a triangular p-pillar and an extended trapezoidal n(+) region, was designed. The TRI-SJ LDMOS has not only a better V-BD than the conventional SJ LDMOS structure on account of its more uniform electric field distribution in the OFF-state, but also a lower R-SP on account of the higher current flow in the ON-state. Accordingly, the excellent high-voltage performance of the new polycrystalline silicon TRI-SJ LDMOS makes it a promising candidate for system-on-panel applications.

• 出版日期2016-6