Black Phosphorus p-MOSFETs With 7-nm HfO2 Gate Dielectric and Low Contact Resistance

作者：Haratipour Nazila^*; Robbins Matthew C; Koester Steven J

来源：IEEE Electron Device Letters, 2015, 36(4): 411-413.

DOI：10.1109/LED.2015.2407195

• Two-dimensional materials
• black phosphorus
• high-K gate dielectrics
• contact resistance
• MOSFET

We report record contact resistance and transconductance in locally back-gated black phosphorus p-MOSFETs with 7-nm thick HfO2 gate dielectrics. Devices with effective gate lengths, L-eff, from 0.55 to 0.17 mu m were characterized and shown to have contact resistance values as low as 1.14 +/- 0.05 Omega-mm. In addition, devices with L-eff = 0.17 mu m displayed extrinsic transconductance exceeding 250 mu S/mu m and ON-state current approaching 300 mu A/mu m.

• 出版日期2015-4